PolyU Develops Quantum-Tunnelling Field-Effect Transistor to Advance Integrated Circuit Chips

Researchers at PolyU have developed a quantum-tunnelling field-effect transistor (TFET) that overcomes the 'Boltzmann limit' in conventional transistors. This breakthrough, published in the journal Science, allows for subthreshold swing values below 60 millivolts at room temperature, paving the way for ultra-low-power, high-performance integrated circuits. The new TFET delivers a high output current and an exceptionally high ON/OFF current ratio, addressing a key challenge in experimental TFETs and potentially reducing circuit delay in future electronics, including AI chips.