ROHM Semiconductor Partners with AIXTRON to Expand In-House GaN Power Device Production

ROHM Semiconductor has selected AIXTRON's G10-GaN deposition system to establish in-house GaN epitaxy at its Hamamatsu plant in Japan. This strategic partnership aims to scale the production of 8-inch GaN epitaxial wafers for 650 V and 100 V power device platforms, enhancing ROHM's control over wafer quality and device performance for AI and automotive markets.