SK hynix Begins Sampling Advanced HBM4E DRAM for AI Applications

SK hynix has announced the delivery of samples for its 12-layer HBM4E, a next-generation DRAM, to key customers. This memory is specifically designed for AI applications, offering a maximum data processing speed of 16Gbps per pin. It also boasts over 20% improved power efficiency compared to previous models, significantly enhancing capabilities for AI training and inference tasks.