GaN-on-Silicon RF Chip Achieves Mass Production Milestone for Smart Terminals

The first mass-produced gallium nitride-on-silicon (GaN-on-Si) radio frequency (RF) chip designed for smart terminals has shipped over 5 million units. Developed by China Electronics Technology Group Corporation, this achievement marks a global first for large-scale commercial deployment of such chips in smart terminal applications. This technology is crucial for enabling widespread high-speed connectivity in integrated space-air-ground information networks.