xLight Develops 2nm EUV Light Source, Aims to Boost Wafer Processing Efficiency by 30-40%

Semiconductor startup xLight is developing a free-electron laser (FEL) EUV light source capable of targeting a 2nm wavelength, significantly more precise than ASML's current 13.5nm lasers. This technology aims to increase wafer processing efficiency by 30-40% and could potentially double production efficiency in new fabs, addressing the supply-demand imbalance for advanced-node chips. xLight is reportedly in discussions with ASML to integrate its FEL system as a component.