Samsung Unveils Next-Generation 3D Memory Architectures, zHBM and zNAND-O, for AI Infrastructure

At FMS 2026, Samsung Electronics showcased its vision for future AI infrastructure by introducing concept models of zHBM and zNAND-O. zHBM is a new memory architecture designed to vertically stack HBM directly above AI accelerators, promising higher bandwidth and improved power efficiency for large-scale AI training and inference. zNAND-O is a high-performance NAND solution optimized for edge AI environments. The company also revealed V10 BV-NAND, an architecture enabled by a new wafer bonding technology.