PolyU Develops Quantum-Tunnelling Transistor for Next-Generation AI Chips

Researchers at The Hong Kong Polytechnic University (PolyU) have engineered a novel quantum-tunnelling field-effect transistor (TFET) using 2D nanomaterials. This breakthrough overcomes the physical “Boltzmann limit” in conventional transistors, paving the way for ultra-low-power, high-performance integrated circuits essential for emerging AI chips and advanced semiconductor applications.