SK Hynix Boosts 1c DRAM Production for HBM4E, Targeting 1Q27 Dominance

SK Hynix is accelerating the production of its sixth-generation 10nm-class (1c) DRAM, which will serve as the core memory die for its upcoming HBM4E. The company projects that 1c DRAM will surpass 1b as the primary DRAM process by the first quarter of 2027. This strategic shift is crucial for meeting the increasing demand for high-bandwidth memory in advanced computing and AI applications.