ASML, TSMC Push 12-Inch Photomasks as High-NA EUV Enters Next Phase

ASML and TSMC are leading an industry initiative to transition to larger 12-inch photomasks for High Numerical Aperture (High-NA) EUV lithography, with Samsung also joining. This move aims to overcome manufacturing constraints for larger, denser chips, especially crucial for AI and high-performance computing. A pilot line is targeted by 2031, with full system readiness by 2033.