ASML, TSMC, and Samsung Lead Industry Push for 12-Inch Photomasks in High-NA EUV Lithography

Major semiconductor players ASML, TSMC, and Samsung are spearheading an industry-wide initiative to transition to larger 12-inch photomasks for High Numerical Aperture (High-NA) Extreme Ultraviolet (EUV) lithography. This move aims to enhance the productivity of advanced chipmaking systems for complex designs, particularly as AI and high-performance computing drive demand for larger, denser chips. The initiative targets a pilot line for 12-inch masks by 2031 and full lithography system readiness for advanced-node production by 2033.