Samsung Forecasts HBM to Account for 30% of DRAM Capacity by 2027

Samsung Electronics Executive Vice President Kim Taewoo predicts that High Bandwidth Memory (HBM) will consume nearly 30% of the DRAM industry's total wafer capacity by 2027, up from approximately 20% currently. This substantial increase is primarily driven by surging demand for AI applications. The expansion of HBM production could potentially restrict the supply of conventional DRAM due to its higher wafer requirements.