Micron's G11 3D NAND to Double Storage Density and Boost I/O Performance by 50%

Micron has announced its next-generation G11 3D NAND technology, expected to enter mass production in the second half of 2027. This advancement will achieve approximately twice the bit density of current-generation NAND and increase I/O speeds by up to 50%, with over 400 layers, significantly impacting high-capacity SSDs for client and data center applications, and emerging AI-oriented storage devices.