Infineon Plans €1.1 Billion Investment for 300mm GaN Semiconductor Production in Austria

AI-generated NewsSnap summary based on source reporting.
Published: 2026-10-27
Category: technology
Source: eeNews Europe
Original source

Infineon Technologies will invest approximately €1.1 billion to establish the world's first high-volume manufacturing facility for gallium nitride (GaN) power semiconductors on 300mm wafers in Villach, Austria. This strategic move aims to scale GaN technology for commercial production, addressing growing demand from AI data centers, electric vehicles, and industrial systems, while strengthening European semiconductor supply chains.

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