Infineon to Invest €1.1 Billion in Gallium Nitride (GaN) Chip Production for AI and E-Mobility

German semiconductor manufacturer Infineon plans to invest approximately €1.1 billion in its Villach, Austria site by 2034 to establish the world's first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers. This investment aims to meet the rapidly growing demand for high-performance power supply solutions in applications such as AI data centers, energy infrastructure, e-mobility, robotics, and consumer electronics. Production is slated to begin by the end of 2027.