Infineon to Build World's First High-Volume 300mm Gallium Nitride (GaN) Power Semiconductor Facility in Europe

Infineon Technologies AG is investing approximately €1.1 billion to establish the world's first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers in Europe. Located at its Villach site, production is slated to begin by the end of 2027. This strategic investment addresses the surging demand for high-performance power supply solutions in critical applications such as AI data centers, energy infrastructure, e-mobility, and robotics, leveraging the efficiency gains of larger wafer diameters.