Infineon to Establish Europe's First High-Volume 300mm GaN Power Semiconductor Manufacturing Facility

Infineon Technologies AG is investing approximately €1.1 billion to build Europe's first high-volume manufacturing facility for gallium nitride (GaN) power semiconductors using 300-millimetre wafers at its Villach site in Austria. This expansion aims to meet the growing demand for energy-efficient power chips in sectors like AI data centers, electric vehicles, and robotics, with manufacturing expected to commence by the end of 2027.